MAT01AH 查看數據表（PDF） - Analog Devices

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MAT01AH

Matched Monolithic Dual Transistor

Analog Devices 

Data Sheet

APPLICATIONS INFORMATION

Application of reverse bias voltages to the emitter to base junctions

in excess of ratings (5 V) may result in degradation of hFE and

hFE matching characteristics. Check circuit designs to ensure

that reverse bias voltages above 5 V cannot be applied during

transient conditions, such as at circuit turn-on and turn-off.

MAT01

Stray thermoelectric voltages generated by dissimilar metals at

the contacts to the input terminals can prevent realization of the

predicted drift performance. Maintain both input terminals at

the same temperature, preferably close to the temperature of the

device package.

Rev. C | Page 9 of 12

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