1SMA4737 查看數據表（PDF） - TSC Corporation
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1SMA4737 - 1SMA200Z
Taiwan Semiconductor
1000
FIG.6 TYPICAL CAPACITANCE versus Vz
0V BIAS
100
1.0V BIAS
50% OF BREAKDOWN
10
1
10
100
Vz, FORWARD VOLTAGE (V)
FIG.8 TEMPERATURE COEFFICIENTS
100
b-RANGE FOR UNITS 12 TO 100 VOLTS
10
RANGE Vz@ IZT
1
10
100
Vz, ZENER VOLTAGE(V)
12
10
8
6
4
2
0
-2
-4
2
FIG. 7 TEMPERATURE COEFFICIENTS
a-RANGE FOR UNITS TO 12 VOLTS
RANGE Vz@ IZT
3 4 5 6 7 8 9 10 11 12
Vz, ZENER VOLTAGE(V)
FIG. 9 EFFECT OF ZENER CURRENT
6
Vz@ IZT
4
0.01mA
1 mA
2
20mA
0
-2
NOTE:BELOW 3 VOLTAGE ABOVE a
VOLTS CHANGES IN ZENER CURRENT
NOT AFFECT TEMPERATURE
-4
3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
Vz, ZENER VOLTAGE(V)
100
5% DUTY CYCLE
10
10% DUTY CYCLE
20% DUTY CYCLE
1
0.01
0.1
FIG.10 MAXIMUM SURGE POWER
11V-91V NON-REPETITIVE
RECTANGULAR WAVEFORM
TA=25°C PRIOR TO INITIAL PULSE
0.8V-10V NON-REPETITIVE
1
10
PW, PULSE WIDTH (ms)
100
1000
Document Number: DS_D1409041
Version: N15
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