C106M 查看數據表（PDF） - Inchange Semiconductor
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C106M Datasheet PDF : 1 Pages
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INCHANGE Semiconductor
isc Thyristors
isc Product Specification
C106M
FEATURES
·Glassivated surface for reliability and uniformity
·Practical level triggering and holding characteristics
·Designed for high volume consumer applications such as
temperature, light, and speed control; process and remote
control, and warning systems where reliability of operation
Is important.
TO-126
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state voltage
VRRM
Repetitive peak off-state voltage
IT(AV)
Average on-state current
IT(RMS)
RMS on-state current
PGM
Peak gate power
PG(AV)
Average gate power
ITSM
Non-repetitive peak on-state current
Tj
Operating junction temperature
Tstg
Storage temperature
MIN
600
600
2.5
4
0.5
0.2
20
110
-40~+ 150
UNIT
V
V
A
A
W
W
A
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VRRM=600V
VRRM=600V, Tj= 125℃
IDRM
Repetitive peak off-state current
VDRM=600V
VDRM=600V, Tj= 125℃
IGT
Gate trigger current
VD= 6V; RL=100Ω, RGK=1KΩ
VTM On-state voltage
IT= 8A
IH
Holding current
VD=24V, RGK=1KΩ, ITM=4A
VGT Gate trigger voltage
VD= 12V; RL=100Ω, RGK=1KΩ
MIN MAX UNIT
10
200
μA
10
200
μA
10 200 μA
1.75 V
5 mA
0.8 V
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