BTB08 查看數據表（PDF） - STMicroelectronics
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BTB08 Datasheet PDF : 21 Pages
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BTA08, BTB08, T810, T835, T850
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value Unit
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
I2t I2t value for fusing
dl/dt
Critical rate of rise of on-state current IG = 2 x
IGT, tr ≤ 100 ns
IGM Peak gate current
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature range
IPAK, DPAK,TO-220AB, D²PAK Tc = 110 °C
8
A
TO-220AB Ins.
Tc = 100 °C
f = 50 Hz
f = 60 Hz
t = 20 ms
80
A
tp = 16.7 ms
84
tp = 10 ms
36
A2s
f = 120 Hz
Tj = 125 °C
50
A/µs
tp = 20 µs
Tj = 125 °C
4
A
Tj = 125 °C
1
W
-40 to +150 °C
-40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and logic level (3
quadrants)
Symbol
Parameter
Quadrant
T8
BTA08/BTB08
Unit
10 35 50 TW SW CW BW
IGT (1)
VGT
VD = 12 V, RL = 30 Ω
I - II - III Max. 10 35 50 5 10 35 50 mA
I - II - III Max.
1.2
V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C
I - II - III Min.
0.2
V
IH (2)
IT = 100 mA
I - II - III Max. 15 35 75 10 15 35 50 mA
IL
IG = 1.2 x IGT
I - III
II
Max. 25 50 70 10 25 50 70
mA
Max. 30 60 110 15 30 60 80
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C
Max. 40 400 1000 20 40 400 1000 V/µs
(dV/dt)c = 0.1 V/µs, Tj = 125 °C
Min. 5.4
3.5 5.4
(dl/dt)c (2) (dV/dt)c = 10 V/µs, Tj = 125 °C
Min. 2.8
1.5 2.98
A/ms
Without snubber, Tj = 125 °C
Min.
4.5 7
4.5 7
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
DS2114 - Rev 15
page 2/21
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