BTB08 查看數據表（PDF） - STMicroelectronics
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BTB08 Datasheet PDF : 21 Pages
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BTA08, BTB08, T810, T835, T850
Characteristics (curves)
Figure 5. On-state characteristics (maximum values)
ITM(A)
100
Tj max.
Vto = 0.85 V
Rd = 50 mΩ
Tj = Tj max.
10
Tj = 25 °C
1
VTM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 6. Surge peak on-state current versus number of
cycles
90 ITSM(A)
80
70
60
50
40
30
20
10
0
1
Non repetitive
Tj initial = 25 °C
Repetitive
TC = 110 °C
10
t = 16.66 ms
One cycle
Number of cycles
100
1000
Figure 7. Non repetitive surge peak on-state current for a
sinusoidal pulse (tp < 10 ms)
ITSM(A)
1000
Tj initial=25°C
100
dI/dt limitation:
50A/µs
360°
α
10
0.01
0.10
ITSM
tp(ms)
1.00
10.00
Figure 8. Relative variation of gate trigger current
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C]
2.5
Holding current and latching current versus junction temperature (typical values)
2.0
IGT
1.5
1.0
IH and IL
0.5
0.0
Tj (°C)
-40 -20
0
20 40 60 80 100 120 140
Figure 9. Relative variation of critical rate of decrease of Figure 10. Relative variation of critical rate of decrease of
main current versus (dV/dt)c (typical values)
main current versus (dV/dt)c (typical values)
(dl/dt)c [(dV/dt)c / specified (dl/dt)c
2.2
2.0
TW
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Snubberless and logic level types
T835/T850/CW/SW/BW
T810/SW
(dV/dt)c (V/µs)
1.0
10.0
100.0
(dl/dt)c [(dV/dt)c] / specified (dl/dt)c
2.0
1.8
1.6
C
1.4
1.2 B
1.0
0.8
0.6
0.4
0.1
(dV/dt)c (V/µs)
1.0
10.0
Standard types
100.0
DS2114 - Rev 15
page 5/21
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