MM1Z2V0 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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MM1Z2V0 Datasheet PDF : 5 Pages
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Electrical Characteristics (TA=25℃ unless otherwise noted)
Type
MM1Z2V0
MM1Z2V2
MM1Z2V4
MM1Z2V7
MM1Z3V0
MM1Z3V3
MM1Z3V6
MM1Z3V9
MM1Z4V3
MM1Z4V7
MM1Z5V1
MM1Z5V6
MM1Z6V2
MM1Z6V8
MM1Z7V5
MM1Z8V2
MM1Z9V1
MM1Z10
MM1Z11
MM1Z12
MM1Z13
MM1Z15
MM1Z16
MM1Z18
MM1Z20
MM1Z22
MM1Z24
MM1Z27
MM1Z30
MM1Z33
MM1Z36
MM1Z39
MM1Z43
MM1Z47
MM1Z51
MM1Z56
MM1Z62
MM1Z68
MM1Z75
Marking
Code
4A
4B
4C
4D
4E
4F
4H
4J
4K
4M
4N
4P
4R
4X
4Y
4Z
5A
5B
5C
5D
5E
5F
5H
5J
5K
5M
5N
5P
5R
5X
5Y
5Z
6A
6B
6C
6D
6E
6F
6H
Zener Voltage Range 1)
V znom
V
2.0
l ZT for
mA
5
V ZT
V
1.8...2.15
2.2
5
2.08...2.33
2.4
5
2.28...2.56
2.7
5
2.5...2.9
3.0
5
2.8...3.2
3.3
5
3.1...3.5
3.6
5
3.4...3.8
3.9
5
3.7...4.1
4.3
5
4...4.6
4.7
5
4.4...5
5.1
5
4.8...5.4
5.6
5
5.2...6
6.2
5
5.8...6.6
6.8
5
6.4...7.2
7.5
5
7...7.9
8.2
5
7.7...8.7
9.1
5
8.5...9.6
10
5
9.4...10.6
11
5
10.4...11.6
12
5
11.4...12.7
13
5
12.4...14.1
15
5
13.8...15.6
16
5
15.3...17.1
18
5
16.8...19.1
20
5
18.8...21.2
22
5
20.8...23.3
24
5
22.8...25.6
27
5
25.1...28.9
30
5
28...32
33
5
31...35
36
5
34...38
39
2.5
37...41
43
2.5
40...46
47
2.5
44...50
51
2.5
48...54
56
2.5
52...60
62
2.5
58...66
68
2.5
64...72
75
2.5
70...79
Dynamic Impedance 2)
ZZT (Max.)
at I Z
Ω
mA
100
5
100
5
100
5
110
5
120
5
130
5
130
5
130
5
130
5
130
5
130
5
80
5
50
5
30
5
30
5
30
5
30
5
30
5
30
5
35
5
35
5
40
5
40
5
45
5
50
5
55
5
60
5
70
2
80
2
80
2
90
2
100
2
130
2
150
2
180
2
180
2
200
2
250
2
300
2
Reverse Leakage Current
IR (Max.)
μA
at VR
V
120
0.5
120
0.7
120
1
120
1
50
1
20
1
10
1
5
1
5
1
2
1
2
1.5
1
2.5
1
3
0.5
3.5
0.5
4
0.5
5
0.5
6
0.1
7
0.1
8
0.1
9
0.1
10
0.1
11
0.1
12
0.1
13
0.1
15
0.1
17
0.1
19
0.1
21
0.1
23
0.1
25
0.1
27
2
30
2
33
2
36
1
39
1
43
0.2
47
0.2
52
0.2
57
1) VZ is tested with pulses (20 ms).
2) ZZT is measured at IZ by given a very small A.C. current signal.
High Diode Semiconductor
2
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