MM1Z2V0 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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MM1Z2V0 Datasheet PDF : 5 Pages
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Typical Characteristics
Breakdown characteristics
Tj = constant (pulsed)
mA
50 Tj=25o C
Iz 40
30
2V7
3V3
3V9
4V7
6V8
8V2
5V6
20
Test current Iz
5mA
10
0
0
1
2
3
4
5
6
7
Vz
8
9
10 V
Breakdown characteristics
Tj = constant (pulsed)
mA
30
Iz
20
10
10
12
15
Test current Iz
5mA
18
22
27
Tj=25 oC
33
0
0
10
20
30
40 V
Vz
High Diode Semiconductor
3
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