BAS40V 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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BAS40V Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Diodes
BAS40V SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Fast Switching
Marking: KAN
Solid dot = Pin1 indicate.
SOT-563
654
1 23
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Junction temperature
Storage temperature range
Symbol
VRM
VR
IO
Pd
RθJA
TJ
TSTG
Limit
40
200
150
667
125
-55~+150
Unit
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR= 10μA
40
Reverse voltage leakage current
Forward voltage
Total capacitance
Reverse recovery time
IR
VR=30V
VF
IF=1mA
IF=40mA
CT
VR=0,f=1MHz
t rr
IF=10mA, IR=IF=1mA
RL=100Ω
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
ns
www.cj-elec.com
1
E,Oct,2015
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