IRF620S 查看數據表（PDF） - Vishay Semiconductors

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生产厂家

IRF620S

Power MOSFET

Vishay Semiconductors 

IRF620S, SiHF620S

Vishay Siliconix

750

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

600

Crss = Cgd

Coss = Cds + Cgd

450

300

150

0

100

91028_05

Ciss

Coss

Crss

101

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

101

150 °C

100

25 °C

0.5

91028_07

VGS = 0 V

0.8

1.0

1.3

1.5

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = 4.8 A

16

12

VDS = 160 V

VDS = 100 V

VDS = 40 V

8

4

0

0

91028_06

For test circuit

see figure 13

3

6

9

12

15

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

102

Operation in this area limited

5

by RDS(on)

2

10 µs

10

100 µs

5

2

1 ms

1

5

2

0.1

0.1 2

10 ms

TC = 25 °C

TJ = 150 °C

Single Pulse

5 12

5 10

2 5 102 2

5 103

91028_08

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91028

S11-1046-Rev. D, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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