ATP301 查看數據表（PDF） - ON Semiconductor

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ATP301

P-Channel Power MOSFET

ON Semiconductor 

ATP301

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=--1mA, VGS=0V

VDS=--100V, VGS=0V

VGS=±16V, VDS=0V

VDS=--10V, ID=--1mA

VDS=--10V, ID=--14A

ID=--14A, VGS=--10V

VDS=--20V, f=1MHz

See specified Test Circuit.

VDS=--60V, VGS=--10V, ID=--28A

IS=--28A, VGS=0V

Ratings

Unit

min

typ

max

--100

V

--1

μA

±10

μA

--2.0

--3.5

V

32

S

57

75 mΩ

4000

pF

270

pF

150

pF

32

ns

130

ns

330

ns

190

ns

73

nC

16

nC

14

nC

--1.0

--1.5

V

Switching Time Test Circuit

Avalanche Resistance Test Circuit

VIN

0V

--10V

VIN

PW=10μs

D.C.≤1%

G

VDD= --60V

ID= --14A

RL=4.3Ω

D

VOUT

0V

--10V

≥50Ω

RG

50Ω

L

ATP301

VDD

ATP301

P.G

50Ω

S

Ordering Information

Device

ATP301-TL-H

Package

ATPAK

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No. A1457-2/7

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