BTB4110D3 查看數據表（PDF） - Cystech Electonics Corp.
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BTB4110D3 Datasheet PDF : 5 Pages
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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB4110D3
BVCEO
IC
RCESAT
Spec. No. : C815D3
Issued Date : 2011.03.25
Revised Date :
Page No. : 1/5
-20V
-5A
75mΩ(typ.)
Features
• Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -4A / -100mA
• Excellent DC current gain characteristics
• Pb-free package
Symbol
BTB4110D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
TA=25°C
TC=25°C
Junction Temperature
Storage Temperature
Note : 1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
BTB4110D3
ECB
Limits
Unit
-40
V
-20
V
-8
V
-5
A
-10 (Note 1)
1.5
W
12
150
°C
-55~+150
°C
CYStek Product Specification
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