MURB1660CT 查看數據表（PDF） - Zibo Seno Electronic Engineering Co.,Ltd
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MURB1660CT Datasheet PDF : 2 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
MURB1610CT – MURB1660CT
20
16
12
8
4
0
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
100
1610 - 1620
1630 - 1640
10
1660
1.0
Pulse width = 300µs
2% duty cycle
0.1
0.2
0.6
1.0
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
180
150
120
90
8.3 ms single half-sine-wave
JEDEC method
60
30
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
400
100
1610 - 1620
1630 - 1660
10
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
MURB1610CT – MURB1660CT
2 of 2
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