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MUR10120E 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MUR10120E
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MUR10120E Datasheet PDF : 4 Pages
1 2 3 4
MUR10120E
Preferred Device
SCANSWITCH
Power Rectifier
For High and Very High Resolution
Monitors
This stateoftheart power rectifier is specifically designed for use
as a damper diode in horizontal deflection circuits for high and very
high resolution monitors.
1200 Volt Blocking Voltage
20 mJ Avalanche Energy (Guaranteed)
12 Volt (Typical) Peak Transient Overshoot Voltage
135 ns (Typical) Forward Recovery Time
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: U10120E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
1200
V
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
Average Rectified Forward Current
IF(AV)
10
A
(Rated VR, TC = 125°C)
Peak Repetitive Forward Current
IFRM
20
A
(Rated VR, Square Wave,
20 kHz, TC = 125°C)
Per Leg
NonRepetitive Peak Surge Current
IFSM
100
A
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Operating Junction
Temperature Range
TJ
65 to +125 °C
Controlled Avalanche Energy
WAVAL
20
mJ
http://onsemi.com
SCANSWITCH
RECTIFIER
10 AMPERES
1200 VOLTS
1
4
3
4
1
3
TO220AC
CASE 221B
STYLE 1
MARKING DIAGRAM
U10120E
U10120E = Device Code
ORDERING INFORMATION
Device
Package
Shipping
MUR10120E
TO220
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
September, 2006 Rev. 3
Publication Order Number:
MUR10120E/D

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