MUR10120CT 查看數據表（PDF） - Thinki Semiconductor Co., Ltd.

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MUR10120CT

10.0 Ampere Heatsink Common Cathode Ultra Fast Recovery Rectifiers

Thinki Semiconductor Co., Ltd. 

MUR1080CT thru MUR10120CT

Pb Free Plating Product

MUR1080CT/MUR10100CT/MUR10120CT

Pb

10.0 Ampere Heatsink Common Cathode Ultra Fast Recovery Rectifiers

Features

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: Heatsink TO-220AB open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.2 gram approximately

TO-220AB/TO-220-3L

.419(10.66)

.387(9.85)

.139(3.55)

MIN

Unit : inch (mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.038(0.96)

.019(0.50)

.1(2.54)

.1(2.54)

.025(0.65)MAX

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CT"

Suffix "CTA"

Suffix "CTD" Suffix "CTS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL MUR1080CT MUR10100CT MUR10120CT UNIT

Maximum Recurrent Peak Reverse Voltage VRRM

800

Maximum RMS Voltage

VRMS

560

Maximum DC Blocking Voltage

VDC

800

Maximum Average Forward Rectified

Current TC=125℃ (Total Device 2x5A=10A)

IF(AV)

1000

700

1000

10.0

1200

V

840

V

1200

V

A

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

(JEDEC method)

150

A

Maximum Instantaneous Forward Voltage

VF

@ 5.0 A (Per Diode/Per Leg)

1.7

V

Maximum DC Reverse Current @TJ=25℃

IR

5.0

At Rated DC Blocking Voltage @TJ=125℃

100

Maximum Reverse Recovery Time (Note 1) Trr

75

Typical junction Capacitance (Note 2)

CJ

90

Typical Thermal Resistance (Note 3)

Operating Junction and Storage

Temperature Range

R JC

TJ, TSTG

1.5

-55 to + 150

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

μA

μA

nS

pF

℃/W

℃

Rev.10T

© 1995 Thinki Semiconductor Co., Ltd.

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