APTM100H18FG(2006) 查看數據表（PDF） - Microsemi Corporation
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APTM100H18FG Datasheet PDF : 6 Pages
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APTM100H18FG
Full - Bridge
MOSFET Power Module
VDSS = 1000V
RDSon = 180mΩ typ @ Tj = 25°C
ID = 43A @ Tc = 25°C
Q1
G1
S1
Q2
G2
S2
G1
VBUS
S1
S3
G3
VB US
Q3
Q4
0/VBUS
O UT 1
0/VBUS
O UT 2
Application
• Welding converters
• Switched Mode Power Supplies
G3
• Uninterruptible Power Supplies
• Motor control
S3
Features
• Power MOS 7® FREDFETs
G4
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
S4
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G2
S2
Benefits
S4
• Outstanding performance at high frequency operation
G4
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1000
V
Tc = 25°C
43
Tc = 80°C
33
A
172
±30
V
210
mΩ
PD Maximum Power Dissipation
Tc = 25°C
780
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
25
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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