APTM100H18FG(2006) 查看數據表（PDF） - Microsemi Corporation

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APTM100H18FG
(Rev.:2006)

Full - Bridge MOSFET Power Module

Microsemi Corporation 

APTM100H18FG

Typical Performance Curve

0.18

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.16

0.9

0.14

0.12

0.7

0.1

0.5

0.08

0.06

0.3

0.04

0.1

0.02 0.05

0

Single Pulse

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Low Voltage Output Characteristics

120

VGS=15, 10&8V

7V

100

80

6.5V

60

6V

40

5.5V

20

5V

0

0 5 10 15 20 25 30

VDS, Drain to Source Voltage (V)

RDS(on) vs Drain Current

1.4

Normalized to

1.3 VGS=10V @ 21.5A

1.2

VGS=10V

1.1

1

VGS=20V

0.9

0.8

0

20 40 60 80 100 120

ID, Drain Current (A)

Transfert Characteristics

160

140

VDS > ID(on)xRDS(on)MAX

250µs pulse test @ < 0.5 duty cycle

120

100

80

60

40

TJ=25°C

20

TJ=125°C

0

TJ=-55°C

0123456789

VGS, Gate to Source Voltage (V)

DC Drain Current vs Case Temperature

45

40

35

30

25

20

15

10

5

0

25 50 75 100 125 150

TC, Case Temperature (°C)

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