APTM100H18FG(2006) 查看數據表（PDF） - Microsemi Corporation

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APTM100H18FG
(Rev.:2006)

Full - Bridge MOSFET Power Module

Microsemi Corporation 

Breakdown Voltage vs Temperature

1.15

1.10

1.05

1.00

0.95

0.90

0.85

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

Threshold Voltage vs Temperature

1.2

1.1

1.0

0.9

0.8

0.7

0.6

-50 -25 0 25 50 75 100 125 150

TC, Case Temperature (°C)

Capacitance vs Drain to Source Voltage

100000

Ciss

10000

1000

Coss

Crss

100

0 10 20 30 40 50

VDS, Drain to Source Voltage (V)

APTM100H18FG

ON resistance vs Temperature

2.5

VGS=10V

2.0 ID=21.5A

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

1000

Maximum Safe Operating Area

100 limited by RDSon

100µs

1ms

10

1

1

Single pulse

TJ=150°C

TC=25°C

10ms

10

100

1000

VDS, Drain to Source Voltage (V)

Gate Charge vs Gate to Source Voltage

14

12

ID=43A

TJ=25°C

10

VDS=200V

VDS=500V

8

VDS=800V

6

4

2

0

0 100 200 300 400 500

Gate Charge (nC)

www.microsemi.com

5–6

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