APTM100H18FG(2006) 查看數據表（PDF） - Microsemi Corporation
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APTM100H18FG Datasheet PDF : 6 Pages
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Delay Times vs Current
200
160
td(off)
120
VDS=670V
RG=2.5Ω
80
TJ=125°C
L=100µH
40
td(on)
0
10
30
50
70
90
ID, Drain Current (A)
Switching Energy vs Current
5
VDS=670V
4 RG=2.5Ω
TJ=125°C
L=100µH
3
Eon
Eof f
2
1
0
10
30
50
70
90
ID, Drain Current (A)
Operating Frequency vs Drain Current
250
200
ZVS
ZCS
150
100
VDS=670V
D=50%
RG=2.5Ω
50 TJ=125°C
Hard
Tc=75°C switching
0
10 15 20 25 30 35 40
ID, Drain Current (A)
APTM100H18FG
Rise and Fall times vs Current
80
VDS=670V
RG=2.5Ω
tf
60 TJ=125°C
L=100µH
40
tr
20
0
10
30
50
70
90
ID, Drain Current (A)
Switching Energy vs Gate Resistance
7
VDS=670V
6 ID=43A
Eoff
5 TJ=125°C
L=100µH
4
Eon
3
2
1
Eoff
0
0
5
10
15
20
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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