MS2213 查看數據表（PDF） - Microsemi Corporation
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MS2213 Datasheet PDF : 3 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
SPECIALITY AVIONICS/JTIDS APPLICATIONS
MS2213
Features
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• 15:1 VSWR CAPABILITY
• LOW RF THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• POUT = 30 W MIN. WITH 7.8 dB Gain
DESCRIPTION:
The MS2213 device is a high power Class C transistor specifically
designed for JTIDS pulsed output and driver applications.
The device is capable of operation over a wide range of pulse
widths, duty cycles and temperatures and is capable of
withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire
bonding techniques ensure high reliability and product
consistency.
The MS2213 is supplied in the hermetic metal/ceramic package
with internal input matching structures.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation *
Device Current *
(TC ≤ 85°C)
Collector - Supply Voltage *
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance
* Applies only to rated RF amplifier operation
MSC0920.PDF 9-23-98
Value
75
3.5
40
250
- 65 to + 200
2.2
Unit
W
A
V
°C
°C
°C/W
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