UGB8JT 查看數據表（PDF） - General Semiconductor
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UGB8JT Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES UGB8HT AND UGB8JT
12.0 FIG. 1 - FORWARD CURRENT DERATIVE CURVE
10.0
RESISTIVE OR INDUCTIVE LOAD
8.0
1,000
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8ms SINGLE HALF SINE WAVE
(JEDEC METHOD)
TJ=TJ max.
6.0
100
4.0
2.0
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE, °C
10
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
100
CHARACTERISTICS
10,000
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
TJ=25°C
1,000
PULSE WIDTH=300µs
1% DUTY CYCLE
1
100
TJ=125°C
TJ=100°C
0.1
0.01
0.5
1.0
1.5
2.0
2.5
3.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
100
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
10 TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
1
1
10
100
1,000
REVERSE VOLTAGE, VOLTS
10
1
0
TJ=25°C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
350 FIG. 6 - REVERSE SWITCHING CHARACTERISTICS
300
Qrr
trr
250
IF=8.0A
VR=30V
200
150
100
di/dt=240A/µs
di/dt=60A/µs
di/dt=50A/µs
di/dt=50A/µs
50
di/dt=60A/µs
di/dt=240A/µs
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE, °C
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