UPD5702 查看數據表（PDF） - NEC => Renesas Technology
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UPD5702
NEC => Renesas Technology
UPD5702 Datasheet PDF : 11 Pages
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µPD5702TU
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current of Q1
Drain Current of Q2
Total Power Dissipation
Channel Temperature
Storage Temperature
Operating Ambient Temperature
Maximum Input Power to Q1
Maximum Input Power to Q2
Symbol
Test Conditions
VDS TA = +25°C
VGS TA = +25°C
Ids1
TA = +25°C
Ids2
TA = +25°C
PD TA = +85°C
Tch
Tstg
TA
Pin1 TA = +25°C
Pin2 TA = +25°C
Note
Ratings
8.0
8.0
45
259
4.33
150
−65 to +150
−40 to +85
6
16
Unit
V
V
mA
mA
W
°C
°C
°C
dBm
dBm
Note Mounted on 33 × 21 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Drain to Source Voltage
Gate to Source Voltage
Maximum Input Power to Q1
Maximum Input Power to Q2
Symbol
Test Conditions
VDS TA = +25°C
VGS TA = +25°C
Pin1 VDS = 3V, TA = +25°C
Pin2 VDS = 3V, TA = +25°C
MIN.
2.7
0
TYP.
3.0
2.0
2.0
11.0
MAX.
3.5
2.5
5.0
15.0
Unit
V
V
dBm
dBm
ELECTRICAL CHARACTERISTICS
(f = 1.9 GHz, VDS = 3.0 V, TA = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter
Symbol
Test Conditions
Gate to Source Voltage
Power Added Efficiency
Drain Current
VGS
PAE
I Note
DS
Pin = −5 dBm
Pout = +21.0 dBm
Input Return Loss
IRL Pin = −20 dBm
Output Return Loss
ORL
Output Power
Pout
Pin = −5 dBm
Power Gain
GP
Linear Gain
GL
Pin = −20 dBm
Adjacent Channel Power Leakage Padj1 Pin = −5 dBm, ∆600 kHz
1
Adjacent Channel Power Leakage Padj2 Pin = −5 dBm, ∆900 kHz
2
Occupied Band Width
OBW Pin = −5 dBm
MIN.
1.0
−
−
−
−
21.0
26.0
−
−
TYP.
1.9
28.0
155
10
8
−
−
26.5
−60.0
MAX.
2.5
−
230
−
−
−
−
−
−55.0
Unit
V
%
mA
dB
dB
dBm
dB
dB
dBc
−
−70.0 −60
dBc
−
250
−
kHz
Note IDS is total Drain currents of Q1 and Q2 part.
Preliminary Data Sheet PU10455EJ01V0DS
3
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