IRFS450A 查看數據表（PDF） - Inchange Semiconductor
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IRFS450A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS450A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=4.8A
VGS= ±30V;VDS= 0
VDS= 500V; VGS= 0
VDS= 400V; VGS= 0; Tj= 125℃
IS= 9.6A; VGS= 0
MIN MAX UNIT
500
V
2
4
V
0.4
Ω
±100
nA
10
100
μA
1.4
V
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