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74LVC1G38GS 查看數據表(PDF) - Nexperia B.V. All rights reserved

零件编号
产品描述 (功能)
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74LVC1G38GS
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA
74LVC1G38GS Datasheet PDF : 19 Pages
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74LVC1G38
2-input NAND gate; open drain
Rev. 8 — 7 December 2016
Product data sheet
1. General description
The 74LVC1G38 provides a 2-input NAND function.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this
device as translator in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant outputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V).
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Open drain outputs
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
Specified from 40 C to +125 C.

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