IRF520 查看數據表（PDF） - Unspecified
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IRF520 Datasheet PDF : 5 Pages
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IRF120-123/IRF520-523
MTP10N08/10N10
N-Channel Power Mosfets,
11A,60-100V
Electrical Characteristics (Cont.) (Tc=25℃ unless otherwise noted)
Symbol
Characteristic
Min
On Characteristics
VGS(th)
Gate Threshold Voltage
IRF12-123/IRF520-523
2.0
RDS(on)
MTP10N08/10N10
2.0
Static Drain-Source On-Resistance2
IRF120/121/520/521
MTP10N08/10N10
IRF122/123/522/523
VDS(on)
Drain-Source On-Voltage 2
MTP 10N08/10N10
Max
4.0
4.5
0.30
0.33
0.40
4.0
3.3
gfs
Forward Transconductance
1.5
Dynamic Characteristics
Ciss
Input Capacitance
600
Coss
Output Capacitance
400
Crss
Reverse Transfer Capacitance
100
Switching Characteristics (Tc=25℃, Figure 1,2)3
td(on)
Turn-On Delay Time
40
tr
Rise Time
70
td(off)
Turn-Off Delay Time
100
tf
Fall Time
70
Qg
Total Gate Charge
15
Unit
V
Ω
V
V
S( )
pF
pF
pF
ns
ns
ns
ns
nC
Symbol
Characteristic
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF120/121/520/521
IRF122/123/522/523
trr
Reverse Recovery Time
Typ
Max
Unit
2.5
V
2.3
V
280
ns
Notes
1. TJ=+25℃ to +150℃
2. Pulse width limited by TJ
3. Switching time measurements performed on LEM TR-58 test equipment.
Test Conditions
ID=250µA, VDS=VGS
ID=1mA, VDS=VGS
VGS=10V
ID=4.0A
ID=5.0A
ID=4.0A
VGS=10V; ID=10.0A
VGS=10V, ID=5.0A
Tc=100℃
VDS=10V, ID=4.0A
VDS=25V, VGS=0V
f=1.0MHz
VDD=50V, ID=4.0A
VGS=10V,RGEN=50 Ω
RGS=50 Ω
VGS=10V, ID=10A
VDD=50V
Test Conditions
IS=8.0A; VGS=0V
IS=7.0A; VGS=0V
IS=4.0A; dls/dt=25A/
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