IRF7105TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total GateCharge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 25
P-Ch -25
V
N-Ch
P-Ch
0.030
-0.015
V/°C
N-Ch
0.083 0.10
0.14 0.16
P-Ch
0.16 0.25
0.30 0.40
Ω
N-Ch 1.0 3.0
P-Ch -1.0 -3.0
V
N-Ch 4.3
P-Ch 3.1
S
N-Ch 2.0
P-Ch
N-Ch
-2.0
25
µA
P-Ch -25
N-P ±100
N-Ch 9.4 27
P-Ch 10 25
N-Ch
P-Ch
1.7
1.9
nC
N-Ch 3.1
P-Ch 2.8
N-Ch 7.0 20
P-Ch 12 40
N-Ch 9.0 20
P-Ch
N-Ch
13
45
40
90
ns
P-Ch 45 90
N-Ch 25 50
P-Ch 37 50
N-P
N-P
4.0
6.0
nH
N-Ch 330
P-Ch 290
N-Ch 250
P-Ch 210
pF
N-Ch 61
P-Ch 67
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 1.0A
VGS = 4.5V, ID = 0.50A
VGS = -10V, ID = -1.0A
VGS = -4.5V, ID = -0.50A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 3.5A
VDS = -15V, ID = -3.5A
VDS = 20V, VGS = 0V
VDS = -20V, VGS = 0V,
VDS = 20V, VGS = 0V, TJ = 55°C
VDS = -20V, VGS = 0V, TJ = 55°C
VGS = ± 20V
N-Channel
ID = 2.3A, VDS = 12.5V, VGS = 10V
P-Channel
ID = -2.3A, VDS = -12.5V, VGS = -10V
N-Channel
VDD = 25V, ID = 1.0A, RG = 6.0Ω,
RD = 25Ω
P-Channel
VDD = -25V, ID = -1.0A, RG = 6.0Ω,
RD = 25Ω
Between lead , 6mm (0.25in.)from
package and center of die contact
N-Channel
VGS = 0V, VDS = 15V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 2.0
IS
Continuous Source Current (Body Diode)
P-Ch -2.0 A
N-Ch 14
ISM
Pulsed Source Current (Body Diode)
P-Ch -9.2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch 1.2 V
P-Ch -1.2
TJ = 25°C, IS = 1.3A, VGS = 0V
TJ = 25°C, IS = -1.3A, VGS = 0V
N-Ch 36 54 ns N-Channel
P-Ch 69 100
TJ = 25°C, IF = 1.3A, di/dt = 100A/µs
N-Ch
P-Ch
41 75 nC
90 180
P-Channel
TJ = 25°C, IF = -1.3A, di/dt = 100A/µs
N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
N-Channel ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
2
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October 16, 2014