IRF7105PBF-1 查看數據表（PDF） - International Rectifier

零件编号

产品描述 (功能)

生产厂家

IRF7105PBF-1

HEXFET® Power MOSFET

International Rectifier 

P-Channel

IRF7105TRPbF-1

VSD , Source-to-Drain Voltage ( V )

Fig 18. Typical Source-Drain Diode

Forward Voltage

VDS , Drain-to-Source Voltage ( V )

Fig 19. Maximum Safe Operating Area

RD

VDS

VGS

RG

D.U.T.

-

+ VDD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 21a. Switching Time Test Circuit

TA , Ambient Temperature ( °C )

VDS

90%

Fig 20. Maximum Drain Current Vs.

Ambient Temperature

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2μF

.3μF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 22a. Gate Charge Test Circuit

10%

VGS

td(on) tr

td(off) tf

Fig 21b. Switching Time Waveforms

-10V

QGS

VG

QG

QGD

Charge

Fig 22b. Basic Gate Charge Waveform

6

www.irf.com © 2014 International Rectifier Submit Datasheet Feedback

October 16, 2014

Share Link: