IXGN200N60A2 查看數據表（PDF） - IXYS CORPORATION
零件编号
产品描述 (功能)
生产厂家
IXGN200N60A2 Datasheet PDF : 5 Pages
| |||
IXGN 200N60A2
Fig. 7. Transconductance
200
180
160 TJ = -40ºC
140
25ºC
125ºC
120
100
80
60
40
20
0
0
50 100 150 200 250 300 350
I C - Amperes
Fig. 9. Dependence of Eoff on Ic
30
RG = 2.4 Ω
25
VGE = 15V
VCE = 480V
20
TJ = 125ºC
15
10
TJ = 25ºC
5
0
50
75
100
125
150
175
200
I C - Amperes
Fig. 11. Gate Charge
15
VCE = 300V
IC = 100A
12
IG = 10mA
9
Fig. 8. Dependence of Eoff on RG
35
30
25
TJ = 125ºC
20
VGE = 15V
VCE = 480V
15
10
IC = 200A
IC = 100A
5
IC = 50A
0
0
5
10
15
20
25
R G - Ohms
Fig. 10. Dependence of Eoff on
Tem perature
30
RG = 2.4 Ω
25
VGE = 15V
VCE = 480V
IC = 200A
20
15
IC = 100A
10
5
IC = 50A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
100000
Fig. 12. Capacitance
f = 1 MHz
10000
Cies
6
1000
Coes
3
Cres
0
0 50 100 150 200 250 300 350 400 450 500
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
100
0
5 10 15 20 25 30 35 40
VC E - Volts
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Share Link: 