NSVBA114EDXV6T1G 查看數據表（PDF） - ON Semiconductor
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NSVBA114EDXV6T1G Datasheet PDF : 8 Pages
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MUN5111DW1, NSBA114EDXV6, NSBA114EDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
−
−
100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
−
−
500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
−
−
0.5
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Vdc
50
−
−
Collector−Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
Vdc
50
−
−
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
hFE
35
60
−
Collector−Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
Vdc
−
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Vdc
−
1.2
−
Input Voltage (on)
(VCE = 0.2 V, IC = 10 mA)
Vi(on)
Vdc
−
2.2
−
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Vdc
−
−
0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Vdc
4.9
−
−
Input Resistor
R1
7.0
10
13
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
400
350
300
250
200
(1) (2) (3)
150
(1) SOT−363; 1.0 x 1.0 inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. copper trace
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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