NSVBA114EDXV6T1G 查看數據表（PDF） - ON Semiconductor
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NSVBA114EDXV6T1G Datasheet PDF : 8 Pages
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IC/IB = 10
0.1
MUN5111DW1, NSBA114EDXV6, NSBA114EDP6
TYPICAL CHARACTERISTICS
MUN5111DW1, NSBA114EDXV6
1000
TA = −25°C
25°C
75°C
100
VCE = 10 V
TA = 75°C
−25°C
25°C
0.01
0
10
9
8
7
6
5
4
3
2
1
0
0
20
40
60
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
10
80
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
f = 10 kHz
lE = 0 A
TA = 25°C
100
75°C 25°C
TA = −25°C
10
1
0.1
10
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.01
VO = 5 V
0.001
50
0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
VO = 0.2 V
10
TA = −25°C
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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