23C256 查看數據表（PDF） - NEC => Renesas Technology
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23C256 Datasheet PDF : 32 Pages
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µPD23C256112A
Electrical Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Input voltage
Input / Output voltage
Operating ambient temperature
Storage temperature
Symbol
VCC
VI
VI/O
TA
Tstg
Condition
Rating
Unit
–0.5 to +4.6
V
–0.3 to VCC+0.3
V
–0.3 to VCC+0.3 ( ≤ 4.6)
V
0 to 70
°C
–65 to +150
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Capacitance (TA = 25°C)
Parameter
Input capacitance
Output capacitance
Symbol
Test condition
CI
f = 1 MHz
CO
MIN.
TYP.
MAX. Unit
10
pF
10
pF
DC Characteristics (TA = 0 to 70°C, VCC = 3.3 ± 0.3 V)
Parameter
Symbol
Test conditions
High level input voltage
VIH
Low level input voltage
VIL
High level output voltage
VOH IOH = –400 µA
Low level output voltage
VOL IOL = 2.1 mA
Input leakage current
ILI
VI = 0 V to VCC
Output leakage current
ILO
VO = 0 V to VCC
Power supply current in read
Power supply current
in command input
Power supply current
in address input
Standby current (TTL)
ICCO1
ICCO3
/CE = VIL, IOUT = 0 mA, tCYCLE = 50 ns
tCYCLE = 50 ns
ICCO5
tCYCLE = 50 ns
ICCS1
/CE = VIH
Standby current (CMOS)
ICCS2 /CE = VCC – 0.2 V
(R, /B) pin output current
IOL(R, /B) VOL = 0.4 V
MIN.
2.0
–0.3
2.4
TYP.
MAX. Unit
VCC + 0.3 V
+0.8
V
V
0.4
V
±10
µA
±10
µA
30
mA
30
mA
30
mA
1
mA
100
µA
8
mA
10
Data Sheet M15902EJ2V0DS
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