VUO122-16NO7_ 查看數據表（PDF） - IXYS CORPORATION
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VUO122-16NO7_ Datasheet PDF : 5 Pages
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VUO122-16NO7
Rectifier
200
800
6000
50 Hz
0.8 x V RRM
VR = 0 V
160
5000
700
I2t
IF 120
[A]
80
TVJ =
40 125°C
150°C
TVJ = 25°C
0
0.4 0.8 1.2 1.6 2.0
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
IFSM
600
[A]
500
TVJ = 45°C
TVJ = 150°C
4000
[A2s]
3000
2000
TVJ = 45°C
TVJ = 150°C
400
10-3
10-2
10-1
100
t [s]
Fig. 2 Surge overload current
vs. time per diode
1000
1
10
t [ms]
Fig. 3 I2t vs. time per diode
60
50
40
Ptot
30
[W]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
10
0
0 10 20 30 40 50 0
IdAVM [A]
25 50 75 100 125 150
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
160
120
IF(AV)M
80
[A]
40
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.7
0.6
0.5
ZthJC
0.4
[K/W]
0.3
0.2
0.1
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
ti (s)
1 0.08
0.012
2 0.04
0.007
3 0.29
0.036
4 0.19
0.102
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
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