IRF5802TRPBF 查看數據表（PDF） - Unspecified

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IRF5802TRPBF

N-Channel 100 V (D-S) MOSFET

Unspecified 

IRF5802TRPBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

0.060

TJ = 150 °C

1

TJ = 25 °C

0.045

0.030

0.015

www.VBsemi.tw

ID = 5.5 A

TJ = 125 °C

TJ = 25 °C

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2.0

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

10

1.8

8

1.6

6

ID = 250 μA

1.4

4

1.2

2

TA = 25 °C

1.0

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

Limited by RDS(on)*

10

0

0.01

0.1

1

10

100

1000

Time (s)

Single Pulse Power (Junction-to-Ambient)

100 μs

1

1 ms

10 ms

0.1

100 ms

TC = 25 °C

Single Pulse

0.01

10 s, 1 s

DC

BVDSS Limited

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

E-mail：China@VBsemi TEL:86-755-83251052

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