IRF6665TRPBF 查看數據表（PDF） - International Rectifier

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IRF6665TRPBF

DIGITAL AUDIO MOSFET

International Rectifier 

IRF6665PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

∆V(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

RDS(on)

Static Drain-to-Source On-Resistance

–––

VGS(th)

Gate Threshold Voltage

3.0

IDSS

Drain-to-Source Leakage Current

–––

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

RG(int)

Internal Gate Resistance

–––

Typ.

–––

0.12

53

–––

–––

–––

–––

–––

1.9

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ.

gfs

Forward Transconductance

6.6

–––

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

–––

8.4

–––

2.2

–––

0.64

–––

2.8

–––

2.8

–––

3.4

–––

7.4

–––

2.8

–––

14

–––

4.3

–––

530

–––

110

–––

29

–––

510

–––

67

–––

130

Avalanche Characteristics

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

Ù Avalanche Current

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min.

–––

Typ.

–––

–––

–––

–––

–––

–––

31

–––

37

Max.

–––

–––

62

5.0

20

250

100

-100

2.9

Units

V

V/°C

mΩ

V

µA

nA

Ω

Conditions

VGS = 0V, ID = 250µA

f Reference to 25°C, ID = 1mA

VGS = 10V, ID = 5.0A

VDS = VGS, ID = 250µA

VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

Max.

–––

13

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

Units

S

nC

Conditions

VDS = 10V, ID = 5.0A

VDS = 50V

VGS = 10V

ID = 5.0A

See Fig. 6 and 17

VDD = 50V

ID = 5.0A

ns

f RG = 6.0Ω

VGS = 10V

VGS = 0V

VDS = 25V

pF ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

g VGS = 0V, VDS = 80V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 80V

Typ.

–––

–––

Max.

11

5.0

Units

mJ

A

Max.

38

34

1.3

–––

–––

Units

A

V

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

f TJ = 25°C, IS = 5.0A, VGS = 0V

f TJ = 25°C, IF = 5.0A, VDD = 25V

di/dt = 100A/µs

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

‚ Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.

ƒ Surface mounted on 1 in. square Cu board.

„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

… Coss eff. is a fixed capacitance that gives the same

charging time as Coss while VDS is rising from 0 to 80% VDSS.

2

† Used double sided cooling , mounting pad.

‡ Mounted on minimum footprint full size board with

metalized back and with small clip heatsink.

ˆ TC measured with thermal couple mounted to top

(Drain) of part.

‰ Rθ is measured at TJ of approximately 90°C.

Š Based on testing done using a typical device & evaluation board

at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case

temperature ∆TC is 55°C.

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