IRF7425TRPBF 查看數據表（PDF） - International Rectifier

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IRF7425TRPBF

HEXFET Power MOSFET

International Rectifier 

IRF7425PbF

12000

10000

8000

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

6000

4000

2000

Coss

Crss

0

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

8 ID = -15A

6

VDS =-16V

VDS =-10V

4

2

0

0

40

80

120

160

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10

TJ = 150° C

100

100us

1

TJ = 25° C

0.1

0.2

VGS = 0 V

0.4

0.6

0.8

1.0

-VSD ,Source-to-Drain Voltage (V)

1ms

10

TA = 25 °C

TJ = 150°C

Single Pulse

1

0.1

1

10ms

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

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Fig 8. Maximum Safe Operating Area

Submit Datasheet Feedback October 29, 2013

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