IRF7478QPBF(2007) 查看數據表（PDF） - International Rectifier

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IRF7478QPBF
(Rev.:2007)

SMPS MOSFET

International Rectifier 

IRF7478QPbF

100000

10000

1000

100

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

10

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10

ID = 4.2A

8

6

VDS = 48V

VDS = 30V

VDS = 12V

4

2

0

0

10

20

30

40

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

TJ = 150° C

10

1

TJ = 25° C

0.1

0.2

VGS = 0 V

0.6

1.0

1.4

1.8

2.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

10

100us

1ms

1

10ms

TA = 25°C

TJ = 150°C

Single Pulse

0.1

1

10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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