IRF7478PBF-1 查看數據表（PDF） - International Rectifier
零件编号
产品描述 (功能)
生产厂家
IRF7478PBF-1 Datasheet PDF : 8 Pages
| |||
IRF7478PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
60
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
–––
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
1.0
–––
IDSS
Drain-to-Source Leakage Current
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– –––
0.065 –––
20 26
23 30
––– 3.0
––– 20
––– 100
––– 100
––– -100
V
V/°C
mΩ
V
μA
nA
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.2A
VGS = 4.5V, ID = 3.5A
VDS = VGS, ID = 250μA
VDS = 48V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
17 ––– –––
Qg
Total Gate Charge
––– 21 31
Qgs
Gate-to-Source Charge
––– 4.3 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 9.6 –––
td(on)
Turn-On Delay Time
––– 7.7 –––
tr
Rise Time
––– 2.6 –––
td(off)
Turn-Off Delay Time
––– 44 –––
tf
Fall Time
––– 13 –––
Ciss
Input Capacitance
––– 1740 –––
Coss
Output Capacitance
––– 300 –––
Crss
Reverse Transfer Capacitance
––– 37 –––
Coss
Output Capacitance
––– 1590 –––
Coss
Output Capacitance
––– 220 –––
Coss eff. Effective Output Capacitance
––– 410 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 4.2A
ID = 4.2A
VDS = 48V
VGS = 4.5V
VDD = 30V
ID = 4.2A
RG = 6.2Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
140
4.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.3
A showing the
integral reverse
G
––– ––– 56
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 4.2A, VGS = 0V
––– 52 78 ns TJ = 25°C, IF = 4.2A
––– 100 150 nC di/dt = 100A/μs
2
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 20, 2013
Share Link: 