SFT10015 查看數據表（PDF） - Solid State Devices, Inc.
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SFT10015 Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics, Tc= 25 ºC
Collector – Emitter Sustaining Voltage
(IC = 100 mA, IB = 0, VCLAMP = 400 V)
Collector Cutoff Current
(VCEV = 600 V, VBE(off) = 1.5V)
Emitter Cutoff Current
(VEB = 2V, IC = 0)
DC Current Gain*
(VCE = 5V)
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
IC = 10 A
IC = 20 A
IC = 40 A
IC = 20 A, IB = 1 A
IC = 50 A, IB = 10 A
IC = 20A, IB = 1A,
TC = 25ºC
Diode Forward Voltage
IF = 20 A
Safe Operating Area, DC (1 sec)
5V, 50A
20V, 8.75A
100V, 0.3A
Output Capacitance
(VCB = 10V, IE = 0A, f = 1MHz)
Delay Time
Rise Time
Storage Time
Fall Time
Switching Times, Resistive Load
VCC = 250 V, IC = 20 A, IB1 = 1 A, VBE (off) = 5 V,
tp = 25s, Duty Cycle ≤ 2%
Storage Time Switching Times, Inductive Load, Clamped
Crossover Time
IC = 20 A(pk), VCLAMP = 250 V,
IB1 = 1 A, VBE (off) = 5 V, TC = 25ºC
Symbol
VCEO(sus)
ICEV
IEBO
HFE
VCE (SAT)
VBE (SAT)
VF
SOA1
SOA2
SOA3
Cob
t(on)
td
tr
t(off)
ts
tf
tsv
tc
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
CASE OUTLINE: TO-3
SFT10015
Min
Typ Max
400
––
––
––
–– 0.25
––
160 350
––
185 ––
25
125 ––
10
50
––
––
1.3 2.2
––
2.1 5.0
––
2.05 2.75
––
2.0 5.0
––
––
––
––
250 750
––
0.15 0.3
––
1.0 1.2
––
2.2 2.5
––
0.95 1.2
––
12
––
––
7.3
––
Units
Volts
mA
mA
Volts
Volts
Volts
pF
µs
µs
μs
µs
µs
µs
Pin Out:
Case – Collector
1 – Base
2 – Emitter
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0126B
DOC
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