IRF7455TRPBF-1 查看數據表（PDF） - International Rectifier

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IRF7455TRPBF-1

SMPS MOSFET

International Rectifier 

IRF7455PbF-1

Static @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS

ΔV(BR)DSS/ΔTJ

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

IDSS

Gate Threshold Voltage

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Min.

30

–––

–––

–––

–––

0.6

–––

–––

–––

–––

Typ.

–––

0.029

0.0060

0.0069

0.010

–––

–––

–––

–––

–––

Max.

–––

–––

0.0075

0.009

0.020

2.0

20

100

200

-200

Units

Conditions

V

V/°C

Ω

V

μA

nA

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 1.0mA

f VGS = 10V, ID = 15A

f VGS = 4.5V, ID = 12A

f VGS = 2.8V, ID = 3.5A

VDS = VGS, ID = 250μA

VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min.

44

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

37

8.9

13

17

18

51

44

3480

870

100

Avalanche Characteristics

Max.

–––

56

13

20

–––

–––

–––

–––

–––

–––

–––

Units

Conditions

S VDS = 10V, ID = 15A

ID = 15A

e nC VDS = 24V

VGS = 5.0V

VDD = 15V

ns ID = 1.0A

e RG=6.0Ω

VGS = 4.5V

VGS = 0V

pF VDS = 25V

ƒ = 1.0MHz

Parameter

EAS

IAR

EAR

d Single Pulse Avalanche Energy

Ù Avalanche Current

Ù Repetitive Avalanche Current

Typ.

–––

–––

–––

Max.

200

15

0.25

Units

mJ

A

mJ

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

D

––– ––– 2.5

(Body Diode)

showing the

A

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

––– ––– 120

––– ––– 1.2

integral reverse

G

e p-n junction diode.

S

V TJ = 25°C, IS = 2.5A, VGS = 0V

trr

Qrr

Reverse Recovery Time

Reverse Recovery Charge

––– 64

––– 99

96

150

eà ns TJ = 25°C, IF = 2.5A

nC di/dt = 100A/μs

2

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November 20, 2013

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