IRF430 查看數據表（PDF） - Intersil
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IRF430 Datasheet PDF : 7 Pages
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IRF430
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction Diode
-
-
4.5
A
D
-
-
18
A
G
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 4.5A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs
-
-
1.4
V
180 370 760
ns
0.96
2
4.3
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 25mH, RG = 25Ω, peak IAS = 4.5A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
5
4
3
2
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1.0
0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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