IRF430
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
2000
1600
1.05
1200
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.95
800
CISS
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
0
1
COSS
CRSS
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
80µs PULSE TEST
4
3
2
TJ = -55oC
TJ = 25oC
TJ = 125oC
1
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
80µs PULSE TEST
10 TJ = 150oC
TJ = 25oC
1
0
1
2
3
4
VSD , SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 4.5A
15
10
VDS = 100V
VDS = 250V
VDS = 400V
5
0
0
8
16
24
32
40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5