NE97833-T1B-A 查看數據表（PDF） - California Eastern Laboratories.
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NE97833-T1B-A Datasheet PDF : 6 Pages
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NE97833
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
-20
VCEO Collector to Emitter Voltage V
-12
VEBO Emitter to Base Voltage
V
-3
IC
Collector Current
mA
-50
TJ
TSTG
Junction Temperature
Storage Temperature
°C
150
°C -65 to +200
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC POWER DERATING CURVES
400
FREE AIR
300
200
NE97833
100
0
0
50
100
150
200
Ambient Temperature, TA (°C)
GAIN BANDWIDTH
vs. COLLECTOR CURRENT
14
f = 1 GHz
12
VCE = -10 V
10
8
6
4
VCE = -3 V
VCE = -1 V
2
0
1
10
100
Collector Current, IC (mA)
DC CURRENT GAINS VS.
COLLECTOR CURRENT
100
VCE = -3 V
VCE = -2 V
VCE = -1 V
10
1
-0.1
-1.0
-10
-100
-1000
Collector Current, IC (mA)
INSERTION GAIN vs. FREQUENCY
30
20
VCE = -10 V
IC = -15 mA
10
VCE = 1 V
0
IC = 5 mA
-10
100
200 300 500
1000
3000
Frequency, f (MHz)
INSERTION GAIN
vs. COLLECTOR CURRENT
14
f = 1 GHz
12
VCE = -10 V
10
8
6
VCE = -3 V
4
VCE = -1 V
2
0
1
10
100
Collector Current, IC (mA)
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