UPA1770G 查看數據表（PDF） - Renesas Electronics
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UPA1770G Datasheet PDF : 10 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1770
SWITCHING
DUAL P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1770 is a P-channel MOS Field Effect
Transistor designed for power management
applications of portable machines.
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1770G
Power SOP8
FEATURES
• Dual chip type
• Low on-resistance
RDS(on)1 = 37 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A)
RDS(on)2 = 39 mΩ MAX. (VGS = –4.0 V, ID = –3.0 A)
RDS(on)3 = 59 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A)
• Low input capacitance
Ciss = 1300 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage
VDSS
–20
V
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 unit) Note2
5 Total Power Dissipation (1 unit) Note3
5 Total Power Dissipation (2 unit) Note3
VGSS
! 12
V
ID(DC)
! 6.0
A
ID(pulse)
! 24
A
PT
0.40
W
PT
0.75
W
PT
1.7
W
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board of 1600 mm2 x 1.6 mm, Drain Pad size : 4.5 mm2 x 35 µm, TA = 25°C
5
3. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm, TA = 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14055EJ1V0DS00 (1st edition) The mark 5 shows major revised points.
Date Published November 1999 NS CP(K)
Printed in Japan
©
1999
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