UPA1770 查看數據表（PDF） - Renesas Electronics
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UPA1770 Datasheet PDF : 10 Pages
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µ PA1770
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
RDS(on)1 VGS = –4.5 V, ID = –3.0 A
28 37 mΩ
RDS(on)2 VGS = –4.0 V, ID = –3.0 A
29.5 39 mΩ
RDS(on)3 VGS = –2.5 V, ID = –3.0 A
44 59 mΩ
Gate to Source Cut-off Voltage
VGS(off) VDS = –10 V, ID = 1 mA
–0.5 –1.0 –1.5 V
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –3.0 A
5.0 11
S
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
IDSS
VDS = –20 V, VGS = 0 V
IGSS
VGS = ! 12 V, VDS = 0 V
Ciss
VDS = –10 V
–1 µA
! 10 µA
1300
pF
Output Capacitance
Coss
VGS = 0 V
325
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
155
pF
Turn-on Delay Time
td(on)
ID = –3.0 A
25
ns
Rise Time
tr
VGS(on) = –4.5 V
110
ns
Turn-off Delay Time
td(off)
VDD = –10 V
130
ns
Fall Time
tf
RG = 10 Ω
140
ns
Total Gate Charge
QG
ID = –6.0 A
11
nC
Gate to Source Charge
QGS
VDD = –16 V
2.0
nC
Gate to Drain Charge
QGD VGS = –4.5 V
4.0
nC
Body Diode Forward Voltage
VF(S-D) IF = 6.0 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 6.0 A, VGS = 0 V
60
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A / µs
40
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
RG = 10 Ω
VGS
0
τ
τ = 1µ s
Duty Cycle ≤ 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on)
ID
90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
90 %
10 %
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G14055EJ1V0DS00
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