µ PA1770
5 TYPICAL CHARACTERISTICS(TA = 25 °C, All terminals are connected.)
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 73.5 ˚C/W
10
1
0.1
0.01
0.001
0.00001 0.0001 0.001
0.01
0.1
Mounted
substrate
on
of
1ce2r0aS0mimnicgml2e×P2u.l2semm
Single Pulse , 1 unit
1
10
100
1000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
Pulsed
TA = −50˚C
TA = −25˚C
TA = 25˚C
10
TA = 75˚C
TA = 125˚C
TA = 150˚C
1
0
−0.1
−1
−10
−100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
70
ID = −6.0 A
60
Pulsed
50
40 ID = −3.0 A
30
20
10
0
0
−2
−4
−6
−8
−10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
VGS = −2.5 V
60
40
VGS = −4.0 V
VGS = −4.5 V
20
−1.5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = −10 V
ID = 1 mA
−1.0
−0.5
0
−0.1
−1
−10
ID - Drain Current - A
−100
−0
−75 −50 −25 0 25 50 75 100 125 150
Tch - Channel Temperature - ˚C
Data Sheet G14055EJ1V0DS00
3