HCF4006M013TR 查看數據表（PDF） - STMicroelectronics
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HCF4006M013TR Datasheet PDF : 8 Pages
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HCF4006B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
tPLH tPHL Propagation Delay Time
5
10
15
tTLH tTHL Output Transition Time
5
10
15
tW Clock Pulse Width
5
10
15
tr, tf Clock Input Rise or Fall
5
Time*
10
15
tsetup Data Setup Time
5
10
15
fMAX Maximum Clock Input
5
Frequency
10
15
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
Test Condition
Value (*)
Unit
Min.
Typ.
200
100
80
100
50
40
100
45
30
15
15
15
50
25
20
5
12
16
Max.
ns
ns
ns
µs
ns
MHz
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
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