MMPQ3725 查看數據表（PDF） - ON Semiconductor

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MMPQ3725

Quad Core Driver Transistor

ON Semiconductor 

MMPQ3725

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

ON CHARACTERISTICS(1)

Symbol

Min

Typ

Max

Unit

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

—

35

75

200

25

45

—

Collector −Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

—

0.32

0.45

Vdc

Base −Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.8

0.9

1.1

Vdc

DYNAMIC CHARACTERISTICS

Current −Gain — Bandwidth Product

(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

—

275

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

5.1

—

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cib

—

62

—

pF

SWITCHING CHARACTERISTICS

Turn−On Time

(IC = 500 mAdc, IB1 = 50 mAdc, VBE(off) = −3.8 Vdc)

ton

—

20

—

ns

Turn−Off Time

(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)

toff

—

50

—

ns

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

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