STP5NA80FI 查看數據表（PDF） - New Jersey Semiconductor
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STP5NA80FI Datasheet PDF : 3 Pages
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STP5NA80/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 400V ID=2.5 A
RG = 47i) VGS = 10V
(see test circuit, figure 3)
40
55
ns
100 135 ns
(di/dt)on Turn-on Current Slope V D D = 6 4 0 V I D = 5 A
RG = 47 SI VGS = 10 V
(see test circuit, figure 5)
180
A/us
Qg Total Gate Charge
VDD = 640 V ID= 5 A VGS= 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
55
75
nC
8
nC
24
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=640V ID=5A
RG = 47 U VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
75
25
110
Max.
100
35
150
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
!SDM(») Source-drain Current
(pulsed)
V S D ( » ) Forward On Voltage ISD = 4.7 A VGS = 0
tr,
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 5 A di/dt = 100 A/U.S
VDD = 100V Tj = 150°C
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
(*) Pulsed: Pulse duration = 300 us, duty cycle 1.5%
(•) Pulse width limited by safe operating area
Min. Typ. Max. Unit
4.7
A
19
A
1.6
V
800
ns
15.2
M.C
38
A
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
1 (A)
10
10
A =
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/
i
. m S
^i
^
V
V
^'
w 1 'S
V": I
)iC OPE ilO \JX
s
10"
1Q
in Vs
1 ms
10ms
W
1C
S '.
< /^ o
, X S;--
O^s
10
/
TIP
V
^
s
'
> V,
1ms
B.C. OPERATIO ^i \v-
10ms
10 3rrs
10"
\^
|N
I t tt 3 t a a ? « a a 2 ^ i f l
10°
10*
102
ID3 VDS (V)
lu
0°
101
I02
103 V
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