IRLL014NTRPBF 查看數據表（PDF） - Unspecified

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IRLL014NTRPBF

N-Channel 60-V (D-S) MOSFET

Unspecified 

IRLL014NTRPBF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.050

0.040

www.VBsemi.tw

ID = 4.0 A

TJ = 150 °C

TJ = 25 °C

10

0.030

0.020

0.010

TJ = 125 °C

TJ = 25 °C

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

1.4

1.2

ID = 250 µA

1.0

0.8

0.6

0.000

0

1

2

3

4

5

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

50

40

30

20

10

0.4

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

10 Limited by RDS(on)*

0

0.001 0.01

0.1

1

10

Time (s)

Single Pulse Power

100 600

10 µs

100 µs

1 ms

1

10 ms

100 ms, DC

0.1

TC = 25 °C

Single Pulse

BVDSS Limited

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Single Pulse Power, Junction-to-Case

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