IRLR3717 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

生产厂家

IRLR3717

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRLR3717, IIRLR3717

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=15A

IGSS

Gate-Source Leakage Current

VGS= ±20V

IDSS

Drain-Source Leakage Current

VDS=16V; VGS= 0V

VSD

Diode forward voltage

Is=12A, VGS = 0V

MIN TYP MAX UNIT

20

V

1.55

2.45

V

4

mΩ

±0.1 μA

1

μA

1

V

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

Share Link: