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IRLR024PBF(2008) 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
IRLR024PBF
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
IRLR024PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRLR024, IRLU024, SiHLR024, SiHLU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 5.0 V
18
4.5
12
Single
0.10
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRLR024/SiHLR024)
• Straight Lead (IRLU024/SiHLU024)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRLR024PbF
SiHLR024-E3
SnPb
Note
a. See device orientation.
IRLR024
SiHLR024
DPAK (TO-252)
IRLR024TRPbFa
SiHLR024T-E3a
IRLR024TRa
SiHLR024Ta
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 541 µH, RG = 25 Ω, IAS = 14 A (see fig. 12).
c. ISD 17 A, dI/dt 140 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
IPAK (TO-251)
IRLU024PbF
SiHLU024-E3
IRLU024
SiHLU024
LIMIT
60
± 10
14
9.2
56
0.33
0.020
91
42
2.5
4.5
- 55 to + 150
260d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Document Number: 91322
S-81431-Rev. A, 21-Jul-08
www.vishay.com
1

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